onsemi · Transistors (BJTs) · MPN UMC3NT1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 35 |
| Vce Saturation(VCE(sat)) | 250mV |
| type | NPN+PNP |
| Output Voltage(VO(on)) | - |
| Input Resistor | 13kΩ |
| Resistor Ratio | 1.2 |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased (Base-Collector Junction) |
| Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353