onsemi TN6717A

onsemi · Transistors (BJTs) · MPN TN6717A

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
DC Current Gain50
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)1.2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))350mV

Technical details

80V 50 NPN 1.2A TO-226-3 Single Bipolar Transistors RoHS

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