onsemi TN3019A

onsemi · Transistors (BJTs) · MPN TN3019A

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain100
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

80V 100 NPN 1A TO-226-3 Single Bipolar Transistors RoHS

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