onsemi TIP50G

onsemi · Transistors (BJTs) · MPN TIP50G

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO5V
DC Current Gain10
Pd - Power Dissipation40W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 400V 1A 10MHz 40W Through Hole TO-220AB

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