onsemi TIP31G

onsemi · Transistors (BJTs) · MPN TIP31G

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Specifications

Current - Collector Cutoff300uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain10
Pd - Power Dissipation40W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.2V

Technical details

40V 10 1 NPN NPN 3A TO-220 Single Bipolar Transistors RoHS

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