onsemi TIP142G

onsemi · Transistors (BJTs) · MPN TIP142G

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Specifications

Vbe Saturation(VBE(sat))3.5V
Current - Collector Cutoff1mA
Vbe On(VBE(on))3V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation125W
typeNPN
Current - Collector(Ic)10A
Operating Temperature-65℃~+150℃@(Tj)
Vce Saturation(VCE(sat))3V@10A,40mA

Technical details

100V 1000 NPN 10A TO-247AC-3 Single Bipolar Transistors RoHS

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