onsemi SS8550DTA

onsemi · Transistors (BJTs) · MPN SS8550DTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO6V
DC Current Gain40
Pd - Power Dissipation2W
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))280mV

Technical details

Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 2W Through Hole TO-92-3

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