onsemi SPZT2222AT1G

onsemi · Transistors (BJTs) · MPN SPZT2222AT1G

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

40V 100 1 NPN NPN 600mA SOT-223-4 Single Bipolar Transistors RoHS

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