onsemi SMUN5114T1G

onsemi · Transistors (BJTs) · MPN SMUN5114T1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor13kΩ
Resistor Ratio0.21
Pd - Power Dissipation202mW
Voltage - Input(Max)(VI(off))700mV
Input Voltage (VI(on)@Ic,Vce)1.4V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 202mW Surface Mount SC-70(SOT-323)

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