onsemi SMUN5114DW1T1G

onsemi · Transistors (BJTs) · MPN SMUN5114DW1T1G

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Specifications

Current - Collector Cutoff100nA
DC Current Gain80
Vce Saturation(VCE(sat))250mV
typePNP
Input Resistor10kΩ
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation187mW
Input Voltage (VI(on)@Ic,Vce)900mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

80 2 PNP Pre-Biased Transistors 187mW 100mA 50V SOT-363-6 Bipolar Transistor Arrays, Pre-Biased RoHS

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