onsemi · Transistors (BJTs) · MPN SMUN5111DW1T1G
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| Current - Collector Cutoff | 500nA |
|---|---|
| DC Current Gain | 35 |
| Vce Saturation(VCE(sat)) | 250mV |
| type | PNP |
| Pd - Power Dissipation | 385mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
35 385mW 100mA 50V SOT-363-6 Bipolar Transistor Arrays, Pre-Biased RoHS