onsemi SMMJT350T3G

onsemi · Transistors (BJTs) · MPN SMMJT350T3G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO300V
DC Current Gain30
Pd - Power Dissipation2.75W
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

300V 30 PNP 500mA SOT-223-3 Single Bipolar Transistors RoHS

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