onsemi SMMBTH10LT1

onsemi · Transistors (BJTs) · MPN SMMBTH10LT1

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO25V
Pd - Power Dissipation300mW
Transition frequency(fT)650MHz
typeNPN
Vce Saturation(VCE(sat))500mV
Number1 NPN

Technical details

25V 300mW NPN Bipolar RF Transistors

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