onsemi · Transistors (BJTs) · MPN SMMBTH10LT1
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| Emitter-Base Voltage(Vebo) | 3V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 25V |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 650MHz |
| type | NPN |
| Vce Saturation(VCE(sat)) | 500mV |
| Number | 1 NPN |
25V 300mW NPN Bipolar RF Transistors