onsemi SMMBT5089LT1G

onsemi · Transistors (BJTs) · MPN SMMBT5089LT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain400
Pd - Power Dissipation300mW
typeNPN
Current - Collector(Ic)50mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

25V 400 NPN 50mA SOT-23-3 Single Bipolar Transistors RoHS

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