onsemi SMMBT3906WT1G

onsemi · Transistors (BJTs) · MPN SMMBT3906WT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain60
Pd - Power Dissipation150mW
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 150mW Surface Mount SC-70(SOT-323)

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