onsemi SMMBT3904TT1G

onsemi · Transistors (BJTs) · MPN SMMBT3904TT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

40V 100 1 NPN NPN 200mA SOT-416F Single Bipolar Transistors RoHS

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