onsemi SHN1B01FDW1T1G

onsemi · Transistors (BJTs) · MPN SHN1B01FDW1T1G

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Specifications

Current - Collector Cutoff100nA
DC Current Gain200
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation380mW
Emitter-Base Voltage VEBO7V
typeNPN+PNP
Vce Saturation(VCE(sat))-
Number1 NPN + 1 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 50V 200mA 380mW Surface Mount SC-74-6

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