onsemi SDTC114YET1G

onsemi · Transistors (BJTs) · MPN SDTC114YET1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Current - Collector(Ic)100mA
Input Resistor10kΩ
typeNPN
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)1.4V
Voltage - Input(Max)(VI(off))500mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-75(SOT-416)

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