onsemi SBCX19LT1G

onsemi · Transistors (BJTs) · MPN SBCX19LT1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))620mV

Technical details

45V 100 1 NPN NPN 500mA SOT-23-3 Single Bipolar Transistors RoHS

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