onsemi SBCW30LT1G

onsemi · Transistors (BJTs) · MPN SBCW30LT1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO32V
DC Current Gain215
Pd - Power Dissipation300mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

32V 215 PNP 100mA SOT-23-3 Single Bipolar Transistors RoHS

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