onsemi SBC857BWT1G

onsemi · Transistors (BJTs) · MPN SBC857BWT1G

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain-
Pd - Power Dissipation150mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

45V PNP 100mA TO-323-3 Single Bipolar Transistors RoHS

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