onsemi SBC856BLT1G

onsemi · Transistors (BJTs) · MPN SBC856BLT1G

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
DC Current Gain220
Pd - Power Dissipation225mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

65V 220 PNP 100mA SOT-23 Single Bipolar Transistors RoHS

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