onsemi SBC847BPDW1T3G

onsemi · Transistors (BJTs) · MPN SBC847BPDW1T3G

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Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation380mW
Transition frequency(fT)100MHz
typeNPN+PNP
Vce Saturation(VCE(sat))-
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

200 45V 380mW NPN+PNP 100mA SOT-363 Bipolar Transistor Arrays RoHS

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