onsemi PZT651T1G

onsemi · Transistors (BJTs) · MPN PZT651T1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)75MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain75
Pd - Power Dissipation800mW
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 60V 2A 75MHz 0.8W Surface Mount SOT-223

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