onsemi PN4355

onsemi · Transistors (BJTs) · MPN PN4355

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation625mW
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

60V 100 1 PNP PNP 800mA TO-92-3 Single Bipolar Transistors RoHS

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