onsemi PN3638

onsemi · Transistors (BJTs) · MPN PN3638

No reviews yet — be the first to review onsemi PN3638.

Specifications

Current - Collector Cutoff2uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO4.9V
DC Current Gain30
Pd - Power Dissipation625mW
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

25V 30 PNP 800mA TO-92-3 Single Bipolar Transistors RoHS

Related Transistors (BJTs)