onsemi PN2907ABU

onsemi · Transistors (BJTs) · MPN PN2907ABU

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation625mW
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.6V

Technical details

Bipolar (BJT) Transistor PNP 60V 800mA 200MHz 625mW Through Hole TO-92-3L

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