onsemi · Transistors (BJTs) · MPN NSVT65011MW6T1G
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| Current - Collector Cutoff | 15nA |
|---|---|
| DC Current Gain | 200 |
| Collector - Emitter Voltage VCEO | 65V |
| Pd - Power Dissipation | 380mW |
| Emitter-Base Voltage VEBO | 6V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
200 65V 380mW NPN 100mA SOT-363 Bipolar Transistor Arrays RoHS