onsemi NSVT3906DXV6T1G

onsemi · Transistors (BJTs) · MPN NSVT3906DXV6T1G

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Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Pd - Power Dissipation500mW
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)250MHz
typePNP
Vce Saturation(VCE(sat))400mV
Number2 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 500mW Surface Mount SOT-563

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