onsemi · Transistors (BJTs) · MPN NSVMUN5213DW1T3G
5.0/5 from 1 engineer review.
| DC Current Gain | 80 |
|---|---|
| Input Resistor | 47kΩ |
| Resistor Ratio | 1 |
| Number | - |
| Pd - Power Dissipation | 385mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
80 385mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS