onsemi · Transistors (BJTs) · MPN NSVMUN5212DW1T1G
No reviews yet — be the first to review onsemi NSVMUN5212DW1T1G.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | - |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 60 |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 22kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 250mW |
| Voltage - Input(Max)(VI(off)) | - |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V@5mA,200mV |
| Current - Collector(Ic) | 100mA |
60 250mW 100mA 50V 2 NPN (Pre-Biased) SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS