onsemi · Transistors (BJTs) · MPN NSVMUN2112T1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 60 |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | 200mV |
| Input Resistor | 22kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 230mW |
50V 60 100mA 230mW PNP 1 PNP Pre-Biased SC-59 Single, Pre-Biased Bipolar Transistors RoHS