onsemi · Transistors (BJTs) · MPN NSVMMUN2217LT1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 35 |
| Vce Saturation(VCE(sat)) | 250mV |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 4.7kΩ |
| type | NPN |
| Resistor Ratio | 0.47 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 246mW |
| Voltage - Input(Max)(VI(off)) | 300mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 246mW Surface Mount SOT-23-3