onsemi NSVMMBTH10LT1G

onsemi · Transistors (BJTs) · MPN NSVMMBTH10LT1G

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Specifications

Collector - Emitter Voltage VCEO25V
Pd - Power Dissipation225mW
DC Current Gain60
Transition frequency(fT)650MHz
typeNPN

Technical details

25V 225mW 60 NPN SOT-23-3 Bipolar RF Transistors RoHS

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