onsemi NSVMMBT6520LT1G

onsemi · Transistors (BJTs) · MPN NSVMMBT6520LT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO350V
DC Current Gain20
Pd - Power Dissipation225mW
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

350V 20 PNP 500mA TO-236-3 Single Bipolar Transistors RoHS

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