onsemi NSVMMBT5550LT1G

onsemi · Transistors (BJTs) · MPN NSVMMBT5550LT1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO140V
DC Current Gain60
Pd - Power Dissipation225mW
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

140V 60 NPN 600mA SOT-23 Single Bipolar Transistors RoHS

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