onsemi NSVMMBT5401WT1G

onsemi · Transistors (BJTs) · MPN NSVMMBT5401WT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain50
Pd - Power Dissipation400mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 150V 500mA 100MHz 400mW Surface Mount SC-70-3

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