onsemi NSVMMBT5401LT3G

onsemi · Transistors (BJTs) · MPN NSVMMBT5401LT3G

No reviews yet — be the first to review onsemi NSVMMBT5401LT3G.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain50
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 150V 500mA 100MHz 300mW Surface Mount SOT-23

Related Transistors (BJTs)