onsemi NSVMMBT3906TT1G

onsemi · Transistors (BJTs) · MPN NSVMMBT3906TT1G

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain100
Pd - Power Dissipation200mW
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

40V 100 PNP 200mA SC-75(SOT-416) Single Bipolar Transistors RoHS

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