onsemi NSVMMBT2907AWT1G

onsemi · Transistors (BJTs) · MPN NSVMMBT2907AWT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain75
Pd - Power Dissipation150mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 150mW Surface Mount SC-70-3

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