onsemi · Transistors (BJTs) · MPN NSVMBT3904DW1T3G
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| Current - Collector Cutoff | - |
|---|---|
| DC Current Gain | 100 |
| Pd - Power Dissipation | 150mW |
| Collector - Emitter Voltage VCEO | 40V |
| Transition frequency(fT) | 300MHz |
| Vce Saturation(VCE(sat)) | 300mV |
| type | NPN |
| Current - Collector(Ic) | 200mA |
| Operating Temperature | -55℃~+150℃ |
100 150mW 40V NPN 200mA SOT-363-6 Bipolar Transistor Arrays RoHS