onsemi NSVF4017SG4T1G

onsemi · Transistors (BJTs) · MPN NSVF4017SG4T1G

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)10GHz
Collector - Emitter Voltage VCEO12V
DC Current Gain60
Pd - Power Dissipation450mW
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

12V 60 NPN 100mA SC-82FL Single Bipolar Transistors RoHS

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