onsemi NSVF4009SG4T1G

onsemi · Transistors (BJTs) · MPN NSVF4009SG4T1G

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Specifications

Emitter-Base Voltage(Vebo)2.5V
Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO3.5V
DC Current Gain50
Pd - Power Dissipation120mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)40mA
ConfigurationCommon Emitter
Transition frequency(fT)25GHz
typeNPN
Vce Saturation(VCE(sat))-
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 3.5V 40mA 25GHz 120mW Surface Mount SC-82FL

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