onsemi NSVF3007SG3T1G

onsemi · Transistors (BJTs) · MPN NSVF3007SG3T1G

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Specifications

Emitter-Base Voltage(Vebo)2V
Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO12V
DC Current Gain60
Pd - Power Dissipation350mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)30mA
Transition frequency(fT)8GHz
typeNPN
Vce Saturation(VCE(sat))-
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 12V 30mA 8GHz 350mW Surface Mount SC-70FL

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