onsemi · Transistors (BJTs) · MPN NSVEMX1DXV6T1G
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| Current - Collector Cutoff | 500nA |
|---|---|
| Pd - Power Dissipation | 500mW |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 120 |
| Transition frequency(fT) | 180MHz |
| Vce Saturation(VCE(sat)) | 400mV |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
500mW 50V 120 NPN 100mA SOT-563 Bipolar Transistor Arrays RoHS