onsemi · Transistors (BJTs) · MPN NSVEMT1DXV6T1G
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| Current - Collector Cutoff | 500pA |
|---|---|
| DC Current Gain | 120 |
| Pd - Power Dissipation | 500mW |
| Collector - Emitter Voltage VCEO | 60V |
| Transition frequency(fT) | 140MHz |
| Vce Saturation(VCE(sat)) | 500mV |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
120 500mW 60V PNP 100mA SOT-563 Bipolar Transistor Arrays RoHS