onsemi · Transistors (BJTs) · MPN NSVDTC123JM3T5G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 80 |
| Emitter-Base Voltage VEBO | 6V |
| Vce Saturation(VCE(sat)) | 250mV |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | 200mV |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.047 |
| Pd - Power Dissipation | 300mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.3V |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
50V 80 100mA 300mW 1 NPN (Pre-Biased) NPN SOT-723 Single, Pre-Biased Bipolar Transistors RoHS