onsemi · Transistors (BJTs) · MPN NSVDTA114EET1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 35 |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V |
| Voltage - Input(Max)(VI(off)) | 1.2V |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-75