onsemi NSVDTA113EM3T5G

onsemi · Transistors (BJTs) · MPN NSVDTA113EM3T5G

No reviews yet — be the first to review onsemi NSVDTA113EM3T5G.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain3
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation260mW

Technical details

50V 3 100mA 1 PNP Pre-Biased 260mW SOT-723 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)