onsemi NSVBCX17LT1G

onsemi · Transistors (BJTs) · MPN NSVBCX17LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO45V
DC Current Gain100
Pd - Power Dissipation225mW
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))620mV

Technical details

45V 100 PNP 500mA SOT-23(TO-236) Single Bipolar Transistors RoHS

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